Highlight Products

With an accumulated track record of over 38 Million highly reliable power devices deployed in xEVs since 1997, Mitsubishi Electric introduces its next generation of scalable automotive power modules: the J3-Series. The core-module, J3-T-PM, is a half-bridge that can be configured with either 1300V SiC MOSFET or 750V Si RC-IGBT with various built-in features. The J3-T-PM is further assembled into three-phase inverters in a modular way (J3-HEXA-S & J3-HEXA-L) and integrated to pin-fin baseplates. These solutions support a wide power range from 80kW to over 350kW~ for both 400V and 800V battery classes. In addition, 1300V SiC MOSFET relays are available in both bidirectional and uni-directional configurations (250A and 350A). These relays share the same footprint as J3-T-PM, providing high-efficiency, solid-state solutions for battery disconnect applications. The latest addition is an automotive‑grade 2‑in‑1 SiC MOSFET module optimized for high‑frequency operation, featuring a low‑inductance, high‑thermal‑performance insulated package with >10 mm creepage distance compliant with LV123 (terminal‑to‑fin), supporting OBC applications.

Mitsubishi Electric has developed a new COMPACT package Intelligent Power Module (COMPACT DIPIPM™) with current/voltage ratings of 30A-50A/600V (PSS30SF1F6 – PSS50SF1F6) for Packaged Air Conditioners, Heat Pump Compressor and Low Power Industrial Drive Applications. By utilizing reverse-conducting insulated-gate bipolar transistors (RC-IGBTs), the module’s footprint has been reduced to almost 53% of that of the company’s conventional Mini DIPIPM Ver.7 series of products, enabling more compact inverter stages.

Mitsubishi Electric has developed a new Full SiC SLIM package Intelligent Power Module (Full SiC SLIMDIP™) with current/voltage rating of 15A/600V (PSF15SG1G6) for Consumer Goods and Low Power Industrial Drive Applications. Power chips, drive and protection circuits are all integrated into the module, which makes it a simple choice for AC100-200V class motor inverter control for highest efficiency in partial load as well as full load operation.

Mitsubishi Electric has developed a new Hybrid SiC SLIM package Intelligent Power Module (Hybrid SiC SLIMDIP™) with current/voltage rating of 15A/600V (PSH15SG1G6) for Consumer Goods and Low Power Industrial Drive Applications. Power chips, drive and protection circuits are all integrated into the module, which makes it a simple choice for AC100-200V class motor inverter control. Hybrid SiC SLIMDIP™ utilizes RC-IGBT and SiC MOSFET in parallel connection, enabling cost vs. performance optimized inverter-based home appliances and low power industrial drives demanding higher energy efficiency especially at partial load operation.

The 8th‑generation 1200 V IGBT and diode chipset in the NX package is designed for converter operation up to 850 Vdc. Covering current ratings from 300 A to 1000 A, the portfolio establishes a new performance level within the package class. Two insulation voltage options, 2.5 kV and 4.0 kV, extend the suitability from renewable‑energy systems to industrial drives and commercial‑vehicle applications. Press‑fit and solder‑pin terminals are available. Different cooling concepts are supported, ranging from a flat baseplate with an optional pre‑applied PC‑TIM to a ribbon‑bond baseplate variant for direct liquid‑cooling concepts. As in the previous generation, SLC technology ensures high power‑cycling capability and robustness in harsh operating environments.

The new advanced 8th gen chip technology combined with the benefits of the LV100 package unlocks a new level of system performance and power density. The 8th Gen. IGBT Technology helps achieve higher current ratings while simultaneously offering higher system efficiencies. The current rating of 1800 A allows for an increase in the output power and is especially beneficial for applications such as central PV and Battery Energy Storage System (BESS). The new CM1800DW-24ME module can be utilized in 2-level as well as in 3-level A-NPC converter topologies.

The new 7th generation 2.5 kV IGBT and diode chipset is optimized for converters operating at 1500 Vdc and 1000 Vac. The CM1200DWA-50TE module uses advanced SLC+ package technology to support a high power cycling lifetime. With high efficiency and strong cosmic ray robustness, this module is a reliable choice for demanding applications such as wind power converters as well as other renewable energy and drive systems.

The LV100 Stack developed by Mitsubishi Electric is a prototype 2 level inverter. This set-up demonstrates how the LV100 modules can be operated in parallel. The LV100 stack has been developed keeping current balancing between IGBTs and the IGBT junction temperature optOimization as key design targets. The temperature distribution and current sharing were verified using 1800A DC test conditions and under VDC-link = 1100V with output current Ioutput = 3600A in a double pulse test. The target output power is 2MW with liquid cooling.

Mitsubishi Electric has released two new HVIGBT modules based on the XB-series chipset, rated 4.5 kV / 1200 A and 6.5 kV / 750 A. The 4.5 kV version is available in both standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms). The XB-series features reduced switching losses and increased RRSOA tolerance, resulting in higher efficiency and improved reliability. It also offers improved moisture resistance for stable inverter operation in high-humidity environments, enabled by an enhanced chip termination design. In addition, the new series is fully dimensionally compatible with existing products, allowing easy replacement and simplifying inverter design.

When reliability becomes mission‑critical, proven concepts must evolve. At this year's PCIM Expo, we will reveal the next evolution of our Unifull™ SiC power modules — specifically enhanced for superior power‑cycling capability. Applications such as battery‑electric and hydrogen trains place extreme demands on SiC power modules. The improved Unifull™ design directly addresses these challenges, offering increased robustness under frequent load changes while maintaining the high performance SiC is known for. Discover how advanced materials and an optimized module design extend lifetime and reliability in the most demanding environments. Visit us at PCIM 2026 and see how the new Unifull ™ takes a decisive step toward future‑proof power electronics.