Overview of all conference papers:
Date and Time
Title / Description
Speaker
Location
Tue, 11/06/2024 13:00
High Voltage Switches: 2.5kV IGBT Module with High Reliability for Renewable Applicationes
The new 2.5 kV IGBT module in the LV100 package for renewable applications is introduced. High power cycling lifetime is realized by adopting the new structure “SLC+”. The resin encapsulation relieves the mechanical stress and the Aluminum-alloy bond wire is stiff to withstand mechanical stress. In addition, the new 2.5kV IGBT and Diode chip-set is optimized for 1500Vdc usage with consideration of trade-off between conduction losses and LTDS robustness.
Akiyoshi Masuda
Mitsubishi Electric
Akiyoshi Masuda belongs to Mitsubishi Electric Corporation Power Device Works, Fukuoka, Japan. He has been working as a design engineer of power modules since 2018. He received the master’s degree in Division of Frontier Materials Science, Graduate School of Engineering Science, Osaka University. In his working, he has been developing new power modules for industry, in particular renewable applications recently.
Hall 10.1 Poster session
Wed, 12/06/2024 13:00
High Voltage WBG Devices: Impact of Gate Control on the Switching Performance of 3.3kV SBD-Embedded SiC-MOSFET
This paper presents dv/dt when switching a new 3.3 kV Schottky-Barrier-Diode (SBD) embedded Silicon-Carbide (SiC) MOSFET module rated for 800A. Various measurements identify influences of temperature, gate drive condition and current value. This work analyzes controllability of voltage transients and the impact on switching losses. The paper shows trade-offs between dv/dt and switching losses and indicates dv/dt ratings of 3.3kV SBD-embedded SiC-MOSFET module.
Junya Sakai
Application Engineer
Mitsubishi Electric
Junya Sakai graduated from Kyushu University in 2014 with a Masters degree in Energy Engineering. Since 2014, he has been working for Mitsubishi Electric Corp. and he is responsible for high power semiconductor modules. His role until 2023 was as an application engineer located in Japan. Currently, he is located in the Mitsubishi Electric office in Ratingen (Germany). His current responsibility is market research for developing next generation high power semiconductor modules.
Hall 10.1 Poster session
Wed, 12/06/2024 14:30
IGBT: The 8th Generation LV100 IGBT Module with Higher Current Rating
This paper presents 8th generation 1800A/1200V IGBT module designed for industrial applications. In this power module, cutting-edge 8th gen. IGBTs and diodes are mounted. Significantly lower power losses can be achieved compared to conventional module by adopting split-dummy-active (SDA) gate structure and reducing chip thickness which can be realized by tuning the backside buffer layer. In particular, the SDA structure reduces Eon approximately 50% with the same recovery dv/dt as the conventional module. By significant cutting of power losses, this module can increase power density. By adopting these technologies and expanding the chip area, the 8th gen. 1200V module achieves a rated current of 1800A, which is 1.5 times higher than the conventional 1200V module, in the same Mitsubishi Electric LV100 package.
Daichi Otori
Design Engineer
Mitsubishi Electric
Daichi Otori belongs to Mitsubishi Electric Corporation, Power Device Works, Fukuoka, Japan. He has been working as a design engineer of power modules since 2017. He is currently developing a IGBT modules for industrial applications. He received the master’s degree in electrical and electronic engineering, from Oita University, Oita, Japan.
Stage: Brüssel 1 Oral session
Thu, 13/06/2024 11:15
SiC Ruggedness: Fast Short Circuit Protection Using di/dt Detection for SiC Power Modules
A new generation of automotive power module (J3 Series) is currently under development. This paper presents a new short-circuit protection for SiC J3-TPM, a member of J3-Series. The short-circuit protection method uses Desaturation (DESAT) and di/dt detection for the automotive SiC power module. The use of this fast protection circuit can significantly reduce short-circuit loss compared to that of conventional DESAT protection and contribute to downsizing the power module.
Koki Samura
Mitsubishi Electric
Koki Samura joined Mitsubishi Electric Corporation in 2021. He is a member of Power Device Works, where he is engaged in development of power modules for xEVs.
Foyer: Poster session
Thu, 13/06/2024 09:50
SiC Devices: 3.3kV SBD-Embedded SiC-MOSFET Module for Traction Use
We developed the 3.3kV SBD-embedded SiC-MOSFET module. The switching loss of the developed module can be reduced compared to the conventional module. Moreover, the SBD-embedded SiC-MOSFETs provide high reliability by preventing bipolar degradation. Furthermore, we developed the novel structure to improve surge current capability. With implemented this structure, the surge current capability of the newly module reaches similar level to that of the body-diode-operated SiC-MOSFET module.
Yoichi Hironaka
Head Engineer
Mitsubishi Electric
Since 2013, Yoichi Hironaka is working as a power module design engineer at Power Device Works, Mitsubishi Electric Corporation, Fukuoka, Japan. He is primarily involved with the development of power modules for traction applications. He received the B.E. and M.E. degrees in electrical and electronic engineering from the Kyushu University, Fukuoka, Japan, in 2011 and 2013.
Stage: Brüssel 1 Oral session
Thu, 13/06/2024 14:00
SiC Modules: Technological Approaches to High-Power Density SiC Power Module for Automotive
In recent years, there are worldwide demands for the electrification of automobiles. This paper explains the details of the novel module series including its features such as the new heat dissipation technology, functional integration for miniaturization, and extremely fast short circuit protection scheme. Finally, application advantages offered by the modules in terms of power loss reduction are investigated.
Takeshi Tokorozuki
Mitsubishi Electric
Tokorozuki Takeshi, is working as a power electronics engineer at Mitsubishi Electric. He is involved with developing Si/SiC power module. He received the B.S and M.S. degrees in electrical and electronic engineering from Tokyo University of Agriculture and Technology, 2017, 2020.
Stage: Brüssel 1 Oral session
