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domain was triggered too early. This is usually an indicator for some code in the plugin or theme running too early. Translations should be loaded at the init
action or later. Please see Debugging in WordPress for more information. (This message was added in version 6.7.0.) in /var/www/vhosts/meu-semiconductor.eu/staging.meu-semiconductor.eu/wp-includes/functions.php on line 6114html5blank
domain was triggered too early. This is usually an indicator for some code in the plugin or theme running too early. Translations should be loaded at the init
action or later. Please see Debugging in WordPress for more information. (This message was added in version 6.7.0.) in /var/www/vhosts/meu-semiconductor.eu/staging.meu-semiconductor.eu/wp-includes/functions.php on line 6114Driving the green transformation forward requires many partners along the energy flow – specialized developers and manufacturers for applications in the increasing generation of renewable energy and its transmission to efficient usage in buildings, industry and mobility.
Our power semiconductors are key components along this entire energy flow and thus contribute to supporting the transition towards decarbonization together with you – in Europe and globally.
We are looking forward to meeting you at PCIM Europe to discuss with you your application and projects in the generation, transmission, and efficient usage of energy.
Wind Applications,
Photovoltaics
LV100 with 8th Gen IGBT 1200 V / 1800 A
2.5 kV IGBT Module in the LV100 Package for Renewable Applications
The 8th Generation LV100 IGBT Module with Higher Current Rating
2.5kV IGBT Module with High Reliability for Renewable Applications
Grid Applications, Battery Storage,
Green Hydrogen
3.3kV SBD-Embedded SiC-MOSFET Module for Traction Use
Impact of Gate Control on the Switching Performance of 3.3kV SBD-Embedded SiC-MOSFET
Automotive, Railway, Motor Control,
Heat Pumps, White Goods
J3-Series power semiconductor modules for various electric vehicles (xEVs)
New Generation of 3.3 kV Full-SiC with embedded SBD
LV100 with 8th Gen IGBT 1200 V / 1800 A
2.5 kV IGBT Module in the LV100 Package for Renewable Applications
Transition to SiC MOSFETs while maintaining the established NX Package Outline
See all power modules for Automotive Railway Industrial Home Appliances
Technological Approaches to High-Power Density SiC Power Module for Automotive
Fast Short Circuit Protection Using di/dt Detection for SiC Power Modules
3.3kV SBD-Embedded SiC-MOSFET Module for Traction Use
Impact of Gate Control on the Switching Performance of 3.3kV SBD-Embedded SiC-MOSFET
The 8th Generation LV100 IGBT Module with Higher Current Rating
2.5kV IGBT Module with High Reliability for Renewable Applications
Mitsubishi Electric has always supported companies in implementing changes for the better.
A first step is a personal consultation. Let us know how we can help you and we will contact you through your preferred channel.
Fields marked with a * are mandatory.
Mitsubishi Electric Europe B.V.
Semiconductor European Business Group
Mitsubishi-Electric-Platz 1
D - 40882 Ratingen
Phone: +49 (0) 2102 / 486 – 0
Fax: +49 (0) 2102 / 486 – 4140
E-Mail: semis.info@meg.mee.com
Internet: www.meu-semiconductor.eu