Conference contributions:
Date and Time
Title / Description
Speaker
Location
Tue, 09/06/2026 12:45
IGBT Devices: 2.5kV IGBT Module with High Withstand Voltage and High Reliability
Power modules for 1500VDC renewable energy systems require high withstand voltage and reliability. The 2.5kV IGBT Module employs CPL technology that reduces wafer thickness increase by ~10% for high withstand voltage and low power loss. The "SLC+" structure, with stiffer alloyed Al wires, improves power cycling lifetime by >2x. This provides a high-performance, reliable solution for renewable energy applications, expanding our product lineup.
Tomokazu Kanna
Tomokazu Kanna belongs to Mitsubishi Electric Corporation, Power Device Works, Fukuoka, Japan. He has been working as a design engineer of power modules since 2021. He is currently developing Si IGBT modules for industrial applications.
Hall 4A - Poster Session
Tue, 09/06/2026 12:45
IGBT Devices: New 6.5 kV HVIGBT Module with Low Loss and High Switching Robustness
Power modules for power conversion applications require low power loss and high Robustness. To satisfy these needs, we developed the 6.5 kV / 750 A XB-series High-Voltage Insulated-Gate Bipolar Transistor (HVIGBT) module. The turn-on and turn-off switching losses of the developed module are reduced by more than 10% compared to the conventional 6.5 kV R-series. Additionally, its Robustness regarding RBSOA, RRSOA, and SCSOA is superior to that of the R-series as presented in this paper.
Yuta Nishimura
Yuta Nishimura is working as a power electronics engineer at Mitsubishi Electric for 4 years. He is mainly involved in the design and development of power units and power devices for electric railways. He received the B.S. and M.S. degrees in power electronics from Osaka Prefecture University, 2019 and 2021.
Yuta Nishimura has experience presenting at multiple conferences, including ICEMS and the Institute of Electrical Engineers of Japan.
Hall 4A - Poster Session
Tue, 09/06/2026 12:45
IGBT Devices: Miniaturization of 3-level Topology Utilizing 8th Generation New NX Module
This paper presents the newly developed Split-NX module for photovoltaic (PV) systems, achieving a reduction in heatsink footprint and loss. This improvement is realized through the use of a single insulated substrate that minimizes stray inductance, low-loss 8th-generation IGBT chips, and integrated neutral-clamp diodes within the NX module. The integrated structure reduces power loss by 10% while limiting the module temperature rise by 15 K compared with standard ceramic modules.
Nobuchika Aoki
Nobuchika Aoki received the master degree in electrical and electronic engineering, from Kumamoto University, Kumamoto, Japan, in 2013. In 2013, he joined Mitsubishi Electric Corporation Power Device Works. He is currently developing a IGBT modules for industrial applications.
Hall 4A - Poster Session
Tue, 09/06/2026 15:30
Modeling and Simulation of Components: Modeling of Space Charge Behavior in Mold Epoxy Resin at Power Semiconductor Chip Termination
Power modules must maintain high reliability under severe environments of high temperature and humidity. Epoxy resin is widely used as an encapsulant for its mechanical, thermal, and electrical properties. However, under DC bias, space charge can accumulate in the epoxy, distorting the electric field and causing failures. To elucidate the underlying mechanisms, we developed a numerical model to analyze and simulate space charge behavior in epoxy resin encapsulating chip terminations.
Koki Kishimoto
Koki Kishimoto, is working as a power electronics researcher at Mitsubishi Electric Corporation since 7 years. He is primarily involved with power devices and modules. He received the M.S. degrees from the University of Tokyo in 2018.
Hall 4A - Poster Session
Wed, 10/06/2026 09:50
WBG Reliability: Comparative Study of Dynamic Gate Stress Effects on SiC MOSFETs
We evaluated threshold voltage drifts (ΔVth) using Dynamic Gate Stress (DGS) testing with junction temperature (Tj) correction including our samples and commercially available samples from four other vendors. The samples from the four other vendors exhibited a temperature dependence, whereas our devices showed no such dependence. Our planar type devices exhibited excellent DGS testing resilience, and our trench type devices also had a lower ΔVth compared to those from other vendors.
Akihiro Koyama
Akihiro Koyama received the M.E. degree in 2011 in Tokyo Metropolitan University, Tokyo, Japan. He joined Mitsubishi Electric Corporation, Hyogo, Japan, in 2011. He was engaged in the development of ultra-high SiC devices at National Institute of Advanced Industrial Science and Technology, Japan from 2016 to 2019. In 2019, he returned to the Mitsubishi Electric Corporation, and he has been engaged in the improvement of gate oxide reliability development of SiC-MOSFET technologies until now.
Stage: St. Petersburg, Level 2
Thu, 11/06/2026 09:50
IGBT Technologies: Development of the 8th Generation 1200V NX Series Featuring 1000A Current Rating
This paper reports on development of 8th generation NX series featuring the latest IGBT chip technology. The 8th generation NX series achieves significant loss reduction and focuses on high current density. By integrating the 8th generation chip technology and the Solid Cover (SLC) packaging technology, maximum current rating of the NX package increase from the conventional of 800A/1200V to 1000A/1200V. These advancements significantly contribute to system miniaturization and higher efficiency.
Kota Ohara
Kota Ohara is an engineer at the Mitsubishi Electric Corporation Power Device Works in Japan. Since joining the company, he has been dedicated to the development of industrial IGBT modules.
Stage: Istanbul, Level 2
