Overview of all conference papers:
Date and Time
Title / Description
Speaker
Location
Tue, 06/05/2025 11:00
SiC MOSFET: SiC MOSFET Module Using Body Diode with High Reliability for Industrial Applications
In this paper, probability of the bipolar degradation and safe usage of body-diode were studied. Current-stress test was performed to confirm probability of VDS(on)-drifts. The tests were conducted on 477,520pcs of 2nd generation planar SiC MOSFETs equivalent to mass-production. It is verified probability of VDS(on)-drifts above 5% is within 100ppm on 600A modules and reliability tests using degraded chips confirmed no further deterioration.
Hidetaka Matsuo
Mitsubishi Electric
Hidetaka Matsuo belongs to Mitsubishi Electric Corporation, Power Device Works, Fukuoka, Japan. He has been working as a design engineer of power modules since 2019. He is currently developing a SiC modules for industrial applications.
Stage: Brüssel 1 Oral Session
Tue, 06/05/2025 12:45
Thermal Management Measurement: Thermal-Interface-Material Degradation Detection Method via Internal Gate Resistance in an IGBT Chip
This paper proposes a method to detect thermal resistance degradation in power modules using a temperature sensing circuit. The circuit uses the temperature-dependent internal gate resistance of power devices. Repeated temperature changes increase the thermal resistance of the thermal interface material (TIM), leading to a higher junction temperature. By altering the number of heat dissipation sheets, the authors demonstrated that the circuit can detect an increase in TIM's thermal resistance.
Yuta Yamaoka
Mitsubishi Electric
Yuta Yamaoka works for Mitsubishi Electric in Japan. He received the M.Eng. degree from Tokyo Institute of Technology, Japan, in 2021. Since 2021, he has been with Mitsubishi Electric Corporation in Japan. His research interests include condition monitoring technology and gate driving technology for power module.
Halle 10.1 Poster Session
Tue, 06/05/2025 14:30
High Power Converters: A 2MW Power Stack Design with LV100-Package IGBT Modules for Renewable Energy Application
In this paper, a single-phase power stack with LV100 package IGBT modules connected in 3-parallel was designed by electro-thermal co-simulation, which includes minimizing thermal cross coupling among paralleled IGBTs, temperature rise of DC and AC busbar. The temperature distribution and current sharing were verified by DC current test under 1800A and double-pulse test under 1000V of DC-Link voltage and 3600A of output current, respectively. Finally, the single-phase inverter test was developed.
Zheng Feng Li
Engineer
Mitsubishi Electric
Zheng-Feng Li received the B.S., M.S. and Ph.D degrees in electrical engineering from the National Taipei University of Technology, Taipei, Taiwan, in 2015, 2017 and 2022, respectively. He is currently an Engineer with the Power Device Work (PDW), Mitsubishi Electric Corporation, Japan. His research interests include power device, resonant converter, motor design, inverter and FEA simulation.
Stage: Brüssel 1 Oral Session
Tue, 06/05/2025 14:30
Hybrid Device Concepts: Parallel Operating SiC MOSFET and Si RC-IGBT in SLIMDIP for Higher Efficiency Air Conditioners
The importance of reducing power consumption for environmental protection has been increasing, and there is a demand for energy conservation in consumer use. The conventional products with SiC MOSFETs have achieved low loss but it was high cost. This paper introduces 15A/600V New SiC SLIMDIP is developed for consumer use that achieves low cost and low loss by connecting RC-IGBT and SiC MOSFET in parallel and optimizing the design of gate drive control.
Toma Takao
Manager
Mitsubishi Electric
Toma Takao joined Power Device Works of Mitsubishi Electric corporation in 2014. He has been working as an application engineer for power semiconductors since he joined the company. Currently, he is in charge of technical marketing and customer support of power semiconductors for consumer use.
Stage: Brüssel 2 Oral Session
Wed, 07/05/2025 14:30
Paralleling Devices: Technical Verification of an Over-2kV New SiC Power Module Aimed at High-Speed Operation
The 2kV-class SiC power module has been developed for renewable energy applications. High power density with SiC-MOSFETs occurs high chip heating, but heat dissipation was improved with an optimal structure. Additionally, the current flowing through the parallel chips is balanced by optimizing the circuit pattern, and oscillation commonly observed in SiC power module is suppressed with maintaining high-speed switching performance.
Tetsuo Yamashita
Mitsubishi Electric
Tetsuo Yamashita in the Mitsubishi Electric Corporation, Power Device Works, Fukuoka, Japan. He has been working as a design engineer of power modules since 2013. He is currently developing a SiC modules for industrial applications. He received the master of engineering, in Kyushu University, Fukuoka, Japan.
Stage: München 2 Oral Session
Thu, 08/05/2025 14:00
IGBT Technologies: New 3.3kV XB-Series HVIGBT Module for High-Speed-Switching
We developed the 3.3kV XB-series HVIGBT module for high-speed-switching. The total switching loss of the developed module can be reduced compared to the conventional module. Moreover, XB series provide higher robustness by optimizing the IGBT chip structure and using an RFC diode. Hence, reverse bias safe operating area is improved compared to the conventional module. Furthermore, the XB series suppresses the snap phenomenon and ensures a high reverse recovery safe operating area.
Shuhei Saito
Mitsubishi Electric
Shuhei Saito received the B.E and M.E degrees in electrical and electronic information engineering from the Toyohashi University of Technology, Aichi, Japan, in 2021 and 2023, respectively. Since 2023, He is working as a Power Device Works, Mitsubishi Electric Corporation, Fukuoka, Japan. He is mainly involved in the development of power devices for electric railways.
Stage: Brüssel Oral Session
