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Mitsubishi Electric is offering 3.3 kV SiC power modules for critical applications like railway-traction drives for many years. Now, the next generation of 3.3 kV SiC power modules, with embedded Schottky Barrier Diode (SBD), is finishing development. These power modules, with reduced switching losses and reduced thermal resistance, enable the performance of your railway traction drives and auxiliary converters to be increased to a completely new level.

With accumulated track record of over 29 million highly reliable power module solutions fitted on xEVs on the road since 1997, Mitsubishi Electric introduces it’s next generation of scalable automotive power modules: the J3-Series. The core-module, J3-T-PM is a compact half-bridge that can be fitted with either 1300V SiC MOSFET or 750V Si RC-IGBT enabling solutions for both 800V and 400V battery classes under the same module foot-print with various built-in features. The J3-T-PM is solderable, in a modular way (J3-HEXA-S & J3-HEXA-L), to pinfin baseplate or directly to the cooling-structure of the inverter covering a wide power range from 80kW to over 250kW~.

The new advanced 8th gen IGBT Technology combined with benefits of LV100 package enabling a new level of performance and power density. The 8th Gen. IGBT Technology offering higher efficiency and higher current ratings.A current rating of 1800 A has been archived and allowing to increase the power and power density of e.g. central PV and Battery Storage Inverters. The module can be utilized in 2-level and 3-level A-NPC converter topologies. *under development

The new 7th Gen. 2.5kV IGBT and Diode chipset is optimized for 1500 Vdc / 1000 Vac converter usage. The new module utilizes the advanced SLC+ package technology, offering a high power cycling lifetime. Its high cosmic ray robustness, combined with high efficiency and power cycling capability, results in an ideal solution for applications such as wind converters. *under development

Mitsubishi Electric has developed a solution for making the transition to SiC technology while maintaining the widely accepted NX package outline. The challenge of adapting the NX package outline for SiC technology is the optimisation of the internal parasitic inductance. A new power module has been developed with the Mitsubishi 2nd generation SiC technology + a low inductance internal package layout design.